Conference Proceedings
The International Conference on Emerging Technologies in Electronics, Computing and Communication 2022
(ICETECC`22)
Investigating the Effects of AlGaN insertion Layers on Ultravoilet-C MicroLED Performance
Shazma Ali1*; Muhammad Usman1;| 1Ghulam Ishaq Khan Institute of Engineering Sciences and Technology |
ABSTRACT
This study investigates the optimization of optoelectronic characteristics of AlGaN-based Ultraviolet-C micro light-emitting diodes (µLEDs) in the 270-280 nm range. The research introduces two approaches: integrating AlGaN insertion layers (ILs) and graded AlGaN ILs within multi-quantum wells (MQWs). Due to the high surface-to-volume ratio and notable sidewall defects, µLEDs often suffer from dominant surface recombination effects. However, the strategic use of ILs in MQWs enhances carrier confinement within the quantum wells, thereby reducing sidewall defect trapping. Graded ILs further improve radiative recombination by retaining carriers more effectively in QWs. Results show a marked increase in internal quantum efficiency (IQE) from 35% to 55% and 63% with AlGaN ILs and graded AlGaN ILs. Additionally, emission intensity is enhanced fourfold with ILs and sixfold with graded ILs compared to the reference structure, demonstrating significant advancements in µLED performance.