The International Conference on Emerging Technologies in Electronics, Computing and Communication 2022
Improved characteristics of deep ultraviolet light-emitting diodes by using quaternary layerSaad Rasheed1; Muhammad Usman1*;
|1Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan.|
We sandwich thin aluminum indium gallium nitride (AlInGaN) layer for increasing the optoelectronic properties of AlGaN-based light-emitting diodes (LEDs). The effect of the quaternary layer (QL) on different properties of the device has been investigated. In comparison to the reference structure (LED 1), simulation finding shows that proposed structure (LED 2) has a high internal quantum efficiency (IQE) peak of 58%. The rate of recombination in the multiquantum wells (MQWs) of LED 2 is improved by ~48%, which can be attributed to the enhanced carrier density in the multiquantum wells of LED 2.