The International Conference on Emerging Technologies in Electronics, Computing and Communication 2022
Enhancement of the optoelectronic performance of Yellow light emitting diodesShazma Ali1*; Muhammad Usman1; Sana Saeed1;
|1Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23460, Khyber Pakhtunkhwa, Pakistan.|
The performance of Indium Gallium Nitride (InGaN) yellow light emitting diodes (LEDs) is improved by special designed graded-EBL in the conventional LED design. The use of graded-EBL in the light-emitting diodes significantly increases the concentration of holes, resulting in a 33% increase in radiative recombination rate. Additionally, the efficiency droop is significantly reduced from 57% to 50% in light-emitting diodes with. As a result, the light-emitting diode with graded-EBL has better optoelectronic properties than conventional AlGaN-EBL. Internal quantum efficiency is increased by 17% in suggested LED. This study demonstrates high-efficiency InGaN-based yellow LEDs with high radiative recombination and intensity.